TNRR : Thai National Research ระบบคลังข้อมูลงานวิจัยไทย

จำนวนงานวิจัยจำแนกรายปี

บุคคลที่เคยร่วมงานวิจัย

ความเชี่ยวชาญ

บุคคลที่เคยร่วมงานวิจัย

#	นักวิจัย	ร่วมงาน
1	Zhang, Zi-Hui	15
2	Liu, Wei	14
3	Tan, Swee Tiam	14
4	Ji, Yun	13
5	Kyaw, Zabu	12
6	Demir, Hilmi Volkan	12
7	Hasanov, Namig	10
8	Sun, Xiaowei	7
9	Zhang, Xueliang	7
10	Sun, Xiao Wei	6
11	Lu, Shunpeng	5
12	Zhang, Yiping	5
13	Zhu, Binbin	5
14	Volkan Demir, Hilmi	3
15	Zheng, Ke	2
16	Zhang, Xue Liang	2
17	Ji, Y.	2
18	Nakamura, Shuji	1
19	DenBaars, Steven P.	1
20	Zhao, Yuji	1
21	Teng, Jing Hua	1
22	Wei Sun, Xiao	1
23	Erdem, Talha	1
24	Wang, Liancheng	1
25	Tiam Tan, Swee	1
26	Wei, Sun Xiao	1
27	Kyaw, Z.	1
28	Lu, S. P.	1
29	Kyaw, Z. B.	1
30	Dikme, Y.	1
31	Zhang, Y. P.	1
32	Zhu, B. B.	1
33	Sun, Handong	1
34	Namig, Hasanov	1
35	Chen, Rui	1

ปี

#	พ.ศ.	จำนวน
1	2557	8
2	2556	6
3	2555	1

ผลงานวิจัย

#	หัวเรื่อง
ปี พ.ศ. 2557
1	On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
2	On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
3	Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
4	Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
5	On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
6	Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
7	Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
8	Low thermal-mass LEDs : size effect and limits
ปี พ.ศ. 2556
9	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
10	InGaN/GaN light-emitting diode with a polarization tunnel junction
11	Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
12	Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
13	PN-type quantum barrier for InGaN/GaN light emitting diodes
14	Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
ปี พ.ศ. 2555
15	On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer