| ชื่อเรื่อง | : | Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier |
| นักวิจัย | : | Ji, Yun , Zhang, Zi-Hui , Tan, Swee Tiam , Ju, Zhengang , Kyaw, Zabu , Hasanov, Namig , Liu, Wei , Sun, Xiaowei , Demir, Hilmi Volkan |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Ji, Y., Zhang, Z.-H., Tan, S. T., Ju, Z., Kyaw, Z., Hasanov, N., et al. (2013). Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier. Optics letters, 38(2), 202-204. , http://hdl.handle.net/10220/11789 , http://dx.doi.org/10.1364/OL.38.000202 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Optics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. |
| บรรณานุกรม | : |
Ji, Yun , Zhang, Zi-Hui , Tan, Swee Tiam , Ju, Zhengang , Kyaw, Zabu , Hasanov, Namig , Liu, Wei , Sun, Xiaowei , Demir, Hilmi Volkan . (2556). Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ji, Yun , Zhang, Zi-Hui , Tan, Swee Tiam , Ju, Zhengang , Kyaw, Zabu , Hasanov, Namig , Liu, Wei , Sun, Xiaowei , Demir, Hilmi Volkan . 2556. "Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ji, Yun , Zhang, Zi-Hui , Tan, Swee Tiam , Ju, Zhengang , Kyaw, Zabu , Hasanov, Namig , Liu, Wei , Sun, Xiaowei , Demir, Hilmi Volkan . "Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Ji, Yun , Zhang, Zi-Hui , Tan, Swee Tiam , Ju, Zhengang , Kyaw, Zabu , Hasanov, Namig , Liu, Wei , Sun, Xiaowei , Demir, Hilmi Volkan . Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
