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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
นักวิจัย : Zhang, Zi-Hui , Tan, Swee Tiam , Liu, Wei , Ju, Zhengang , Zheng, Ke , Kyaw, Zabu , Ji, Yun , Hasanov, Namig , Sun, Xiaowei , Demir, Hilmi Volkan
คำค้น : DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Zhang, Z. H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer. Optics Express, 21(4), 4958-4969. , 1094-4087 , http://hdl.handle.net/10220/9923 , http://dx.doi.org/10.1364/OE.21.004958
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Optics express
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced.

บรรณานุกรม :
Zhang, Zi-Hui , Tan, Swee Tiam , Liu, Wei , Ju, Zhengang , Zheng, Ke , Kyaw, Zabu , Ji, Yun , Hasanov, Namig , Sun, Xiaowei , Demir, Hilmi Volkan . (2556). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhang, Zi-Hui , Tan, Swee Tiam , Liu, Wei , Ju, Zhengang , Zheng, Ke , Kyaw, Zabu , Ji, Yun , Hasanov, Namig , Sun, Xiaowei , Demir, Hilmi Volkan . 2556. "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Zhang, Zi-Hui , Tan, Swee Tiam , Liu, Wei , Ju, Zhengang , Zheng, Ke , Kyaw, Zabu , Ji, Yun , Hasanov, Namig , Sun, Xiaowei , Demir, Hilmi Volkan . "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Zhang, Zi-Hui , Tan, Swee Tiam , Liu, Wei , Ju, Zhengang , Zheng, Ke , Kyaw, Zabu , Ji, Yun , Hasanov, Namig , Sun, Xiaowei , Demir, Hilmi Volkan . Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.