| ชื่อเรื่อง | : | On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer |
| นักวิจัย | : | Zhang, Zi-Hui , Ji, Yun , Liu, Wei , Tan, Swee Tiam , Kyaw, Zabu , Ju, Zhengang , Zhang, Xueliang , Hasanov, Namig , Lu, Shunpeng , Zhang, Yiping , Zhu, Binbin , Sun, Xiao Wei , Volkan Demir, Hilmi |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Zhang, Z.-H., Ji, Y., Liu, W., Tan, S. T., Kyaw, Z., Ju, Z., et al. (2014). On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer. Applied Physics Letters, 104(7), 073511-. , 0003-6951 , http://hdl.handle.net/10220/19493 , http://dx.doi.org/10.1063/1.4866041 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied Physics Letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. |
| บรรณานุกรม | : |
Zhang, Zi-Hui , Ji, Yun , Liu, Wei , Tan, Swee Tiam , Kyaw, Zabu , Ju, Zhengang , Zhang, Xueliang , Hasanov, Namig , Lu, Shunpeng , Zhang, Yiping , Zhu, Binbin , Sun, Xiao Wei , Volkan Demir, Hilmi . (2557). On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhang, Zi-Hui , Ji, Yun , Liu, Wei , Tan, Swee Tiam , Kyaw, Zabu , Ju, Zhengang , Zhang, Xueliang , Hasanov, Namig , Lu, Shunpeng , Zhang, Yiping , Zhu, Binbin , Sun, Xiao Wei , Volkan Demir, Hilmi . 2557. "On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhang, Zi-Hui , Ji, Yun , Liu, Wei , Tan, Swee Tiam , Kyaw, Zabu , Ju, Zhengang , Zhang, Xueliang , Hasanov, Namig , Lu, Shunpeng , Zhang, Yiping , Zhu, Binbin , Sun, Xiao Wei , Volkan Demir, Hilmi . "On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Zhang, Zi-Hui , Ji, Yun , Liu, Wei , Tan, Swee Tiam , Kyaw, Zabu , Ju, Zhengang , Zhang, Xueliang , Hasanov, Namig , Lu, Shunpeng , Zhang, Yiping , Zhu, Binbin , Sun, Xiao Wei , Volkan Demir, Hilmi . On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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