| ชื่อเรื่อง | : | On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| นักวิจัย | : | Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Sun, Xiao Wei , Demir, Hilmi Volkan |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Kyaw, Z., Zhang, Z.- H., Liu, W., Tan, S. T., Ju, Z. G., Zhang, X. L., et al. (2014). On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes. Optics Express, 22(1), 809-816. , 1094-4087 , http://hdl.handle.net/10220/18801 , http://dx.doi.org/10.1364/OE.22.000809 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Optics express |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. |
| บรรณานุกรม | : |
Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Sun, Xiao Wei , Demir, Hilmi Volkan . (2557). On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Sun, Xiao Wei , Demir, Hilmi Volkan . 2557. "On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Sun, Xiao Wei , Demir, Hilmi Volkan . "On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Sun, Xiao Wei , Demir, Hilmi Volkan . On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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