| ชื่อเรื่อง | : | Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes |
| นักวิจัย | : | Ji, Yun , Liu, Wei , Erdem, Talha , Chen, Rui , Tan, Swee Tiam , Zhang, Zi-Hui , Ju, Zhengang , Zhang, Xueliang , Sun, Handong , Sun, Xiao Wei , Zhao, Yuji , DenBaars, Steven P. , Nakamura, Shuji , Volkan Demir, Hilmi |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Ji, Y., Liu, W., Erdem, T., Chen, R., Tan, S. T., Zhang, Z.-H., et al. (2014). Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes. Applied Physics Letters, 104(14), 143506-. , 0003-6951 , http://hdl.handle.net/10220/19530 , http://dx.doi.org/10.1063/1.4870840 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates. |
| บรรณานุกรม | : |
Ji, Yun , Liu, Wei , Erdem, Talha , Chen, Rui , Tan, Swee Tiam , Zhang, Zi-Hui , Ju, Zhengang , Zhang, Xueliang , Sun, Handong , Sun, Xiao Wei , Zhao, Yuji , DenBaars, Steven P. , Nakamura, Shuji , Volkan Demir, Hilmi . (2557). Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ji, Yun , Liu, Wei , Erdem, Talha , Chen, Rui , Tan, Swee Tiam , Zhang, Zi-Hui , Ju, Zhengang , Zhang, Xueliang , Sun, Handong , Sun, Xiao Wei , Zhao, Yuji , DenBaars, Steven P. , Nakamura, Shuji , Volkan Demir, Hilmi . 2557. "Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ji, Yun , Liu, Wei , Erdem, Talha , Chen, Rui , Tan, Swee Tiam , Zhang, Zi-Hui , Ju, Zhengang , Zhang, Xueliang , Sun, Handong , Sun, Xiao Wei , Zhao, Yuji , DenBaars, Steven P. , Nakamura, Shuji , Volkan Demir, Hilmi . "Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Ji, Yun , Liu, Wei , Erdem, Talha , Chen, Rui , Tan, Swee Tiam , Zhang, Zi-Hui , Ju, Zhengang , Zhang, Xueliang , Sun, Handong , Sun, Xiao Wei , Zhao, Yuji , DenBaars, Steven P. , Nakamura, Shuji , Volkan Demir, Hilmi . Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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