| ชื่อเรื่อง | : | Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| นักวิจัย | : | Dharmarasu, Nethaji , Radhakrishnan, K. , Sun, Z. Z. , Agrawal, M. |
| คำค้น | : | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2554 |
| อ้างอิง | : | Dharmarasu, N., Radhakrishnan, K., Sun, Z. Z., & Agrawal, M. (2011). Realization of Two Dimensional Electron Gas in AlGaN/GaN HEMT Structure Grown on Si (111) by PA-MBE. Physica Status Solidi C, 8 (7-8), 2075–2077. , http://hdl.handle.net/10220/6954 , http://dx.doi.org/10.1002/pssc.201001046 , 159549 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Physica status solidi C |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. |
| บรรณานุกรม | : |
Dharmarasu, Nethaji , Radhakrishnan, K. , Sun, Z. Z. , Agrawal, M. . (2554). Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Dharmarasu, Nethaji , Radhakrishnan, K. , Sun, Z. Z. , Agrawal, M. . 2554. "Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Dharmarasu, Nethaji , Radhakrishnan, K. , Sun, Z. Z. , Agrawal, M. . "Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print. Dharmarasu, Nethaji , Radhakrishnan, K. , Sun, Z. Z. , Agrawal, M. . Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.
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