| ชื่อเรื่อง | : | Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy |
| นักวิจัย | : | Dharmarasu, Nethaji , Radhakrishnan, K. , Agrawal, M. , Ravikiran, Lingaparthi , Arulkumaran, Subramaniam , Lee, Kenneth E. , Ing, Ng Geok |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Ravikiran, L., Arulkumaran, S., Lee, K. E.,& Ing, N. G. (2012). Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy. Applied Physics Express, 5(9), 091003-. , http://hdl.handle.net/10220/12599 , http://dx.doi.org/10.1143/APEX.5.091003 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics express |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN(002) XRD peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm2/V·s were measured at RT and 90 K, respectively. Submicron gate devices exhibited good pinch-off characteristics with a maximum drain current (IDmax) of 768 mA/mm at Vg= +1 V and a maximum extrinsic transconductance (gmmax) of 190 mS/mm at VD= 6 V. |
| บรรณานุกรม | : |
Dharmarasu, Nethaji , Radhakrishnan, K. , Agrawal, M. , Ravikiran, Lingaparthi , Arulkumaran, Subramaniam , Lee, Kenneth E. , Ing, Ng Geok . (2555). Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Dharmarasu, Nethaji , Radhakrishnan, K. , Agrawal, M. , Ravikiran, Lingaparthi , Arulkumaran, Subramaniam , Lee, Kenneth E. , Ing, Ng Geok . 2555. "Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Dharmarasu, Nethaji , Radhakrishnan, K. , Agrawal, M. , Ravikiran, Lingaparthi , Arulkumaran, Subramaniam , Lee, Kenneth E. , Ing, Ng Geok . "Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Dharmarasu, Nethaji , Radhakrishnan, K. , Agrawal, M. , Ravikiran, Lingaparthi , Arulkumaran, Subramaniam , Lee, Kenneth E. , Ing, Ng Geok . Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
