| ชื่อเรื่อง | : | Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs |
| นักวิจัย | : | Liu, Wenhu , Padovani, Andrea , Larcher, Luca , Raghavan, Nagarajan , Pey, Kin Leong |
| คำค้น | : | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Liu, W., Padovani, A., Larcher, L., Raghavan, N., & Pey, K. L. (2014). Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft BreakdownTiN/HfLaO/SiOx nMOSFETs. IEEE Electron Device Letters, 35(2), 157-159. , 0741-3106 , http://hdl.handle.net/10220/20244 , http://dx.doi.org/10.1109/LED.2013.2295923 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE Electron Device Letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs. |
| บรรณานุกรม | : |
Liu, Wenhu , Padovani, Andrea , Larcher, Luca , Raghavan, Nagarajan , Pey, Kin Leong . (2557). Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Wenhu , Padovani, Andrea , Larcher, Luca , Raghavan, Nagarajan , Pey, Kin Leong . 2557. "Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Wenhu , Padovani, Andrea , Larcher, Luca , Raghavan, Nagarajan , Pey, Kin Leong . "Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Liu, Wenhu , Padovani, Andrea , Larcher, Luca , Raghavan, Nagarajan , Pey, Kin Leong . Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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