| ชื่อเรื่อง | : | GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm |
| นักวิจัย | : | Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Ma, B. S., Fan, W., Dang, Y. X., Cheah, W. K., Loke, W. K., Liu, W., Li, D. S., Yoon, S. F., Zhang, D. H., Wang, H., & Tung, C. H. (2007). GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm. Applied physics letters, 91(5), 051102. , 0003-6951 , http://hdl.handle.net/10220/18144 , http://dx.doi.org/10.1063/1.2767185 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A GaInNAs/AlAs/AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at 1.2 eV. After annealing at 650 °C, a large blueshift of 40 meV was observed. The photocurrent peak at 1.24 m is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k· p calculations agree with the above observations. |
| บรรณานุกรม | : |
Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . (2550). GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . 2550. "GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . "GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Loke, Wan Khai , Liu, W. , Li, D. S. , Yoon, Soon Fatt , Zhang, Dao Hua , Wang, H. , Tung, Chih Hang . GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
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