| ชื่อเรื่อง | : | A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| นักวิจัย | : | Yeoh, Yuan Lin , Wang, Bo , Yu, Xiangyao , Kim, Tony Tae-Hyoung |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Yeoh, Y. L., Wang, B., Yu, X., & Kim, T. T. (2013). A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 3030 - 3033. , http://hdl.handle.net/10220/16579 , http://dx.doi.org/10.1109/ISCAS.2013.6572517 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | - |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense small RBL swing. The ultra-fine grain power gating switches are implemented to minimize the redundant leakage caused by the storage of garbage data. The leakage suppression of 52% is achieved after the initial power-up. A 16 kb SRAM test chip was fabricated in a 65nm CMOS technology and showed the minimum energy of 2.01 pJ at 0.4 V. |
| บรรณานุกรม | : |
Yeoh, Yuan Lin , Wang, Bo , Yu, Xiangyao , Kim, Tony Tae-Hyoung . (2556). A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yeoh, Yuan Lin , Wang, Bo , Yu, Xiangyao , Kim, Tony Tae-Hyoung . 2556. "A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yeoh, Yuan Lin , Wang, Bo , Yu, Xiangyao , Kim, Tony Tae-Hyoung . "A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Yeoh, Yuan Lin , Wang, Bo , Yu, Xiangyao , Kim, Tony Tae-Hyoung . A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
