| ชื่อเรื่อง | : | Sensing margin enhancement techniques for ultra-low-voltage SRAMs utilizing a bitline-boosting current and equalized bitline leakage |
| นักวิจัย | : | Do, Anh Tuan , Nguyen, Truc Quynh , Yeo, Kiat Seng , Kim, Tony Tae-Hyoung |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Do, A. T., Nguyen, T. Q., Yeo, K. S., & Kim, Tony T. T.-H. (2012). Sensing Margin Enhancement Techniques for Ultra-Low-Voltage SRAMs Utilizing a Bitline-Boosting Current and Equalized Bitline Leakage. IEEE Transactions on Circuits and Systems II: Express Briefs, 59(12), 868-872. , 1549-7747 , http://hdl.handle.net/10220/11361 , http://dx.doi.org/10.1109/TCSII.2012.2231014 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on circuits and systems II : express briefs |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A small bitline sensing margin is one of the most challenging design obstacles for reliable ultra-low-voltage static random access memory (SRAM) implementation. This paper presents design techniques for bitline sensing margin enhancement using decoupled SRAMs. The proposed bitline-boosting current scheme improves the bitline sensing margin at a given bitline configuration. The bitline sensing margin can be further augmented by equalizing bitline leakage. Simulation using a 40-nm CMOS process shows that the proposed techniques achieve larger bitline sensing margin, wider operating temperature and supply range, and a larger number of cells per bitline. |
| บรรณานุกรม | : |
Do, Anh Tuan , Nguyen, Truc Quynh , Yeo, Kiat Seng , Kim, Tony Tae-Hyoung . (2556). Sensing margin enhancement techniques for ultra-low-voltage SRAMs utilizing a bitline-boosting current and equalized bitline leakage.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Do, Anh Tuan , Nguyen, Truc Quynh , Yeo, Kiat Seng , Kim, Tony Tae-Hyoung . 2556. "Sensing margin enhancement techniques for ultra-low-voltage SRAMs utilizing a bitline-boosting current and equalized bitline leakage".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Do, Anh Tuan , Nguyen, Truc Quynh , Yeo, Kiat Seng , Kim, Tony Tae-Hyoung . "Sensing margin enhancement techniques for ultra-low-voltage SRAMs utilizing a bitline-boosting current and equalized bitline leakage."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Do, Anh Tuan , Nguyen, Truc Quynh , Yeo, Kiat Seng , Kim, Tony Tae-Hyoung . Sensing margin enhancement techniques for ultra-low-voltage SRAMs utilizing a bitline-boosting current and equalized bitline leakage. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
