| ชื่อเรื่อง | : | Maximization of SRAM energy efficiency utilizing MTCMOS technology |
| นักวิจัย | : | Wang, Bo , Zhou, Jun , Kim, Tony Tae-Hyoung |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | http://hdl.handle.net/10220/12584 , http://dx.doi.org/10.1109/ACQED.2012.6320472 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | - |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Higher-Vth devices in the cross-coupled latches and the write access transistors, and lower-Vth devices in the read ports are preferred for reducing leakage current without sacrificing performance. However, at ultra-low supply voltage levels, higher-Vth devices can retard or nullify energy efficiency due to substantially slower write speed than read. This paper presents energy efficiency maximization techniques for 8T SRAMs utilizing multi-threshold CMOS (MTCMOS) technology and various design techniques. Simulation results using a commercial 65 nm technology show that the SRAM energy efficiency can improved up to 33x through MTCMOS and prior power reduction and performance boosting techniques. |
| บรรณานุกรม | : |
Wang, Bo , Zhou, Jun , Kim, Tony Tae-Hyoung . (2555). Maximization of SRAM energy efficiency utilizing MTCMOS technology.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, Bo , Zhou, Jun , Kim, Tony Tae-Hyoung . 2555. "Maximization of SRAM energy efficiency utilizing MTCMOS technology".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, Bo , Zhou, Jun , Kim, Tony Tae-Hyoung . "Maximization of SRAM energy efficiency utilizing MTCMOS technology."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Wang, Bo , Zhou, Jun , Kim, Tony Tae-Hyoung . Maximization of SRAM energy efficiency utilizing MTCMOS technology. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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