Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction leakage behavior can be attained on narrow-width n+/p and p+/n junction as compared with standard rapid thermal annealed samples. Liquid-phase epitaxial Co-silicide regrowth has been found to occur and create a smooth and abrupt silicide/Si interface with high junction integrity using multiple-pulse laser annealing. Heat confinement created by the shallow trench isolation surrounding the narrow-width n+/p and p+/n junctions has minimized rapid quenching that might result in an amorphous structure. This has facilitated the crystallization of Co-silicide with multiple-pulse laser annealing.