| ชื่อเรื่อง | : | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device |
| นักวิจัย | : | Zhang, H. Z. , Ang, Diing Shenp , Gu, C. J. , Yew, K. S. , Wang, X. P. , Lo, G. Q. |
| คำค้น | : | DRNTU::Science::Physics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Zhang, H. Z., Ang, D. S., Gu, C. J., Yew, K. S., Wang, X. P., & Lo, G. Q. (2014). Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device. Applied physics letters, 105(22), 222106-. , http://hdl.handle.net/10220/24557 , http://dx.doi.org/10.1063/1.4903341 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device. ASTAR (Agency for Sci., Tech. and Research, S’pore) |
| บรรณานุกรม | : |
Zhang, H. Z. , Ang, Diing Shenp , Gu, C. J. , Yew, K. S. , Wang, X. P. , Lo, G. Q. . (2557). Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhang, H. Z. , Ang, Diing Shenp , Gu, C. J. , Yew, K. S. , Wang, X. P. , Lo, G. Q. . 2557. "Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhang, H. Z. , Ang, Diing Shenp , Gu, C. J. , Yew, K. S. , Wang, X. P. , Lo, G. Q. . "Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Zhang, H. Z. , Ang, Diing Shenp , Gu, C. J. , Yew, K. S. , Wang, X. P. , Lo, G. Q. . Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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