| ชื่อเรื่อง | : | Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film |
| นักวิจัย | : | Liu, Pan , Chen, Tu Pei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. |
| คำค้น | : | DRNTU::Science::Physics. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Liu, P., Chen, T. P., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., et al. (2014). Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film. Applied Physics Letters, 104(3), 033505-. , http://hdl.handle.net/10220/18991 , http://dx.doi.org/10.1063/1.4862972 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A write-once-read-many-times (WORM) memory devices based on O2 plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼109 Ω for a device with the radius of 50 μm) as a result of the O2 plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼103 Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities. |
| บรรณานุกรม | : |
Liu, Pan , Chen, Tu Pei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . (2557). Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Pan , Chen, Tu Pei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . 2557. "Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Pan , Chen, Tu Pei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . "Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Liu, Pan , Chen, Tu Pei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
