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CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor.

หน่วยงาน Nanyang Technological University, Singapore

รายละเอียด

ชื่อเรื่อง : CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor.
นักวิจัย : Kropelnicki, P. , Muckensturm, K.-M. , Mu, X. J. , Randles, A. B. , Cai, H. , Ang, Wan Chia , Tsai, J. M. , Vogt, H.
คำค้น : DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน : Nanyang Technological University, Singapore
ผู้ร่วมงาน : -
ปีพิมพ์ : 2556
อ้างอิง : Kropelnicki, P., Muckensturm, K. M., Mu, X. J., Randles, A. B., Cai, H., Ang, W. C., & et al. (2013). CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor. Journal of micromechanics and microengineering, 23(8), 085018-. , http://hdl.handle.net/10220/17741 , http://dx.doi.org/10.1088/0960-1317/23/8/085018
ที่มา : -
ความเชี่ยวชาญ : -
ความสัมพันธ์ : Journal of micromechanics and microengineering
ขอบเขตของเนื้อหา : -
บทคัดย่อ/คำอธิบาย :

This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top of aluminum nitride (AlN) were used to generate the wave. A membrane was fabricated on SOI wafer with a 10 µm thick device layer. The sensor chip was mounted on a pressure test package and pressure was applied to the backside of the membrane, with a range of 20–100 psi. The temperature coefficient of frequency (TCF) was experimentally measured in the temperature range of −50 °C to 300 °C. By using the modified Butterworth–van Dyke model, coupling coefficients and quality factor were extracted. Temperature-dependent Young's modulus of composite structure was determined using resonance frequency and sensor interdigital transducer (IDT) wavelength which is mainly dominated by an AlN layer. Absolute sensor phase noise was measured at resonance to estimate the sensor pressure and temperature sensitivity. This paper demonstrates an AlN-based pressure sensor which can operate in harsh environment such as oil and gas exploration, automobile and aeronautic applications.

บรรณานุกรม :
Kropelnicki, P. , Muckensturm, K.-M. , Mu, X. J. , Randles, A. B. , Cai, H. , Ang, Wan Chia , Tsai, J. M. , Vogt, H. . (2556). CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor..
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Kropelnicki, P. , Muckensturm, K.-M. , Mu, X. J. , Randles, A. B. , Cai, H. , Ang, Wan Chia , Tsai, J. M. , Vogt, H. . 2556. "CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor.".
    กรุงเทพมหานคร : Nanyang Technological University, Singapore.
Kropelnicki, P. , Muckensturm, K.-M. , Mu, X. J. , Randles, A. B. , Cai, H. , Ang, Wan Chia , Tsai, J. M. , Vogt, H. . "CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor.."
    กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print.
Kropelnicki, P. , Muckensturm, K.-M. , Mu, X. J. , Randles, A. B. , Cai, H. , Ang, Wan Chia , Tsai, J. M. , Vogt, H. . CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor.. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.