| ชื่อเรื่อง | : | The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers |
| นักวิจัย | : | Zhao, Hanxue , Fatt, Yoon Soon , Yong, Ngo Chun , Wang, Rui |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2554 |
| อ้างอิง | : | Zhao, H., Fatt, Y. S., Yong, N. C., & Wang, R. (2012). The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers. physica status solidi (c), 9(2), 326-329. , 1862-6351 , http://hdl.handle.net/10220/16819 , http://dx.doi.org/10.1002/pssc.201100266 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Physica status solidi (c) |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this work, we investigated the optical characteristics of 1.3 µm p -doped InAs/InGaAs/GaAs quantum dot (QD) lasers that consist of either as-grown or annealed QDs. With reference to the as-grown QD lasers, it is found that 1) the integrated intensity of the photoluminescence could be increased by 63%, and 2) the onset of excited state lasing can be significantly delayed to a higher injection current with optimum annealing conditions. In addition, the internal quantum efficiency and internal optical loss of the annealed QD lasers has been improved. The observed improvements could be attributed to the removal of defects which act as nonradiative recombination centers in the QD structure and the reduction in the Auger-related recombination processes upon annealing. |
| บรรณานุกรม | : |
Zhao, Hanxue , Fatt, Yoon Soon , Yong, Ngo Chun , Wang, Rui . (2554). The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhao, Hanxue , Fatt, Yoon Soon , Yong, Ngo Chun , Wang, Rui . 2554. "The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhao, Hanxue , Fatt, Yoon Soon , Yong, Ngo Chun , Wang, Rui . "The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print. Zhao, Hanxue , Fatt, Yoon Soon , Yong, Ngo Chun , Wang, Rui . The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 µm p-doped InAs/InGaAs/GaAs quantum dot lasers. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.
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