| ชื่อเรื่อง | : | Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition |
| นักวิจัย | : | Wang, Rui , Yoon, Soon Fatt , Lu, Fen , Fan, Weijun , Liu, Chongyang , Loh, Ter-Hoe , Nguyen, Hoai Son , Narayanan, Balasubramanian |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Wang, R., Yoon, S. F., Lu, F., Fan, W., Liu, C., Loh, T. H., Nguyen, H. S., & Narayanan, B. (2007). Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition. Nanoscale research letters, 2(3), 149-154. , http://hdl.handle.net/10220/18135 , http://dx.doi.org/10.1007/s11671-007-9046-8 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Nanoscale research letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-band k p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained. |
| บรรณานุกรม | : |
Wang, Rui , Yoon, Soon Fatt , Lu, Fen , Fan, Weijun , Liu, Chongyang , Loh, Ter-Hoe , Nguyen, Hoai Son , Narayanan, Balasubramanian . (2550). Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, Rui , Yoon, Soon Fatt , Lu, Fen , Fan, Weijun , Liu, Chongyang , Loh, Ter-Hoe , Nguyen, Hoai Son , Narayanan, Balasubramanian . 2550. "Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, Rui , Yoon, Soon Fatt , Lu, Fen , Fan, Weijun , Liu, Chongyang , Loh, Ter-Hoe , Nguyen, Hoai Son , Narayanan, Balasubramanian . "Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Wang, Rui , Yoon, Soon Fatt , Lu, Fen , Fan, Weijun , Liu, Chongyang , Loh, Ter-Hoe , Nguyen, Hoai Son , Narayanan, Balasubramanian . Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
