| ชื่อเรื่อง | : | Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells |
| นักวิจัย | : | Fang, Z. , Yu, Hongyu , Chroboczek, J. A. , Ghibaudo, G. , Buckley, J. , De Salvo, B. , Li, X. , Kwong, Dim Lee |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Fang, Z., Yu, H., Chroboczek, J. A., Ghibaudo, G., Buckley, J., De Salvo, B., et al. (2012). Low-Frequency Noise in Oxide-Based (TiN/HfOx/Pt) Resistive Random Access Memory Cells. IEEE Transactions on Electron Devices, 59(3), 850-853. , 0018-9383 , http://hdl.handle.net/10220/13477 , http://dx.doi.org/10.1109/TED.2011.2178245 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on electron devices |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfOx/Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is localized without an area dependence, whereas for the high resistance state, it is a uniform leakage current throughout the whole device area. An LFN model is proposed for the filamentary LRS based on the carrier number fluctuation approach, allowing physical analysis of filament characteristics and the surrounding trap concentration. |
| บรรณานุกรม | : |
Fang, Z. , Yu, Hongyu , Chroboczek, J. A. , Ghibaudo, G. , Buckley, J. , De Salvo, B. , Li, X. , Kwong, Dim Lee . (2555). Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Fang, Z. , Yu, Hongyu , Chroboczek, J. A. , Ghibaudo, G. , Buckley, J. , De Salvo, B. , Li, X. , Kwong, Dim Lee . 2555. "Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Fang, Z. , Yu, Hongyu , Chroboczek, J. A. , Ghibaudo, G. , Buckley, J. , De Salvo, B. , Li, X. , Kwong, Dim Lee . "Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Fang, Z. , Yu, Hongyu , Chroboczek, J. A. , Ghibaudo, G. , Buckley, J. , De Salvo, B. , Li, X. , Kwong, Dim Lee . Low-frequency noise in oxide-based (TiN/HfOx/Pt) resistive random access memory cells. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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