| ชื่อเรื่อง | : | Perspective of flash memory realized on vertical Si nanowires |
| นักวิจัย | : | Yu, Hongyu , Sun, Yuan , Singh, Navab , Lo, Guo-Qing , Kwong, Dim Lee |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2554 |
| อ้างอิง | : | http://hdl.handle.net/10220/11120 , http://dx.doi.org/10.1016/j.microrel.2011.10.025 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Microelectronics reliability |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this review article, the scaling challenges of planar non-volatile memory, especially the flash-types including both floating gate-based and charge-trap-based devices are firstly discussed. The promising prospects brought by 3-Dimensional (3-D) nano-wire-based cells have been presented along with various device demonstrations and discussions on vertical nano-wire platform. The memory devices with highly scaled single-crystal Si nanowire (SiNW) channel and a gate-all-around (GAA) structure achieve superior program/erase (P/E) speed, cycling and high-temperature retention characteristics as compared to the planar one and are considered as promising candidate for future ultra-high non-volatile flash memory application. |
| บรรณานุกรม | : |
Yu, Hongyu , Sun, Yuan , Singh, Navab , Lo, Guo-Qing , Kwong, Dim Lee . (2554). Perspective of flash memory realized on vertical Si nanowires.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yu, Hongyu , Sun, Yuan , Singh, Navab , Lo, Guo-Qing , Kwong, Dim Lee . 2554. "Perspective of flash memory realized on vertical Si nanowires".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yu, Hongyu , Sun, Yuan , Singh, Navab , Lo, Guo-Qing , Kwong, Dim Lee . "Perspective of flash memory realized on vertical Si nanowires."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print. Yu, Hongyu , Sun, Yuan , Singh, Navab , Lo, Guo-Qing , Kwong, Dim Lee . Perspective of flash memory realized on vertical Si nanowires. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.
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