| ชื่อเรื่อง | : | Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation |
| นักวิจัย | : | Vicknesh, Sahmuganathan , Arulkumaran, Subramaniam , Ng, Geok Ing |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | http://hdl.handle.net/10220/13454 , http://dx.doi.org/10.1109/MWSYM.2012.6259783 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | - |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | An effective suppression of drain current collapse was realized in both Enhancement (E)-mode and Depletion (D)-mode AlGaN/GaN High-electron-mobility-transistors (HEMTs) on 4-inch Silicon (111) by ammonium sulfide [(NH4)2Sx] passivation. The current collapse was studied using the pulsed current-voltage characteristics with the pulse width of 200 ns and pulse period of 1 ms. With reference to the AlGaN/GaN HEMTs without sulfur passivation, about 30% of the drain current collapse was suppressed for drain quiescent biases of 25 to 30 V. Obtaining low current collapse is essential to demonstrate high power GaN HEMTs. |
| บรรณานุกรม | : |
Vicknesh, Sahmuganathan , Arulkumaran, Subramaniam , Ng, Geok Ing . (2555). Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Vicknesh, Sahmuganathan , Arulkumaran, Subramaniam , Ng, Geok Ing . 2555. "Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Vicknesh, Sahmuganathan , Arulkumaran, Subramaniam , Ng, Geok Ing . "Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Vicknesh, Sahmuganathan , Arulkumaran, Subramaniam , Ng, Geok Ing . Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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