| ชื่อเรื่อง | : | Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge |
| นักวิจัย | : | Zhang, L. , Peng, L. , Li, H. Y. , Lo, Guo-Qing , Kwong, Dim Lee , Tan, Chuan Seng |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | http://hdl.handle.net/10220/11346 , http://dx.doi.org/10.1109/LED.2012.2190968 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE electron device letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min. |
| บรรณานุกรม | : |
Zhang, L. , Peng, L. , Li, H. Y. , Lo, Guo-Qing , Kwong, Dim Lee , Tan, Chuan Seng . (2555). Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhang, L. , Peng, L. , Li, H. Y. , Lo, Guo-Qing , Kwong, Dim Lee , Tan, Chuan Seng . 2555. "Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Zhang, L. , Peng, L. , Li, H. Y. , Lo, Guo-Qing , Kwong, Dim Lee , Tan, Chuan Seng . "Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Zhang, L. , Peng, L. , Li, H. Y. , Lo, Guo-Qing , Kwong, Dim Lee , Tan, Chuan Seng . Operating TSV in stable accumulation capacitance region by utilizing Al2O3-induced negative fixed charge. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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