The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.

ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.

หน่วยงาน Nanyang Technological University, Singapore

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ชื่อเรื่อง	:	The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.
นักวิจัย	:	Lau, W. S. , Yang, Peizhen. , Siah, S. Y. , Chan, L.
คำค้น	:	DRNTU::Engineering::Electrical and electronic engineering.
หน่วยงาน	:	Nanyang Technological University, Singapore
ผู้ร่วมงาน	:	-
ปีพิมพ์	:	2555
อ้างอิง	:	http://hdl.handle.net/10220/11296 , http://dx.doi.org/10.1016/j.microrel.2012.06.111
ที่มา	:	-
ความเชี่ยวชาญ	:	-
ความสัมพันธ์	:	Microelectronics reliability
ขอบเขตของเนื้อหา	:	-
บทคัดย่อ/คำอธิบาย	:	Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed.
บรรณานุกรม	:	APA Chicago MLA Vancouver Lau, W. S. , Yang, Peizhen. , Siah, S. Y. , Chan, L. . (2555). The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.. กรุงเทพมหานคร : Nanyang Technological University, Singapore. Lau, W. S. , Yang, Peizhen. , Siah, S. Y. , Chan, L. . 2555. "The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.". กรุงเทพมหานคร : Nanyang Technological University, Singapore. Lau, W. S. , Yang, Peizhen. , Siah, S. Y. , Chan, L. . "The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.." กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Lau, W. S. , Yang, Peizhen. , Siah, S. Y. , Chan, L. . The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.