| ชื่อเรื่อง | : | Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| นักวิจัย | : | Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2551 |
| อ้างอิง | : | Tan, E. J., Pey, K. L., Singh, N., Chi, D. Z., Lo, G. Q., Lee, P. S., et al. (2008). Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47(4), 3277-3281. , 1347-4065 , http://hdl.handle.net/10220/10505 , http://dx.doi.org/10.1143/JJAP.47.3277 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Japanese journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900 µA/µm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied. |
| บรรณานุกรม | : |
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . (2551). Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . 2551. "Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . "Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2551. Print. Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Chi, Dong Zhi , Lo, Guo-Qiang , Lee, Pooi See , Hoe, Keat Mun , Chin, Yoke King , Cui, Guangda . Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2551.
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