| ชื่อเรื่อง | : | Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels |
| นักวิจัย | : | Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Tang, L. J. , Lee, Pooi See , Ho, C. K. F. |
| คำค้น | : | DRNTU::Engineering::Materials |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2551 |
| อ้างอิง | : | Tan, E. J., Pey, K. L., Singh, N., Lo, G. Q., Chi, D. Z., Chin, Y. K., et al. (2008). Nickel-silicided Schottky Junction CMOS Transistors with Gate-all-around Nanowire Channels. IEEE Electron Device Letters, 29(8), 902-905. , http://hdl.handle.net/10220/8344 , http://dx.doi.org/10.1109/LED.2008.2000876 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE electron device letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal–semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture. |
| บรรณานุกรม | : |
Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Tang, L. J. , Lee, Pooi See , Ho, C. K. F. . (2551). Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Tang, L. J. , Lee, Pooi See , Ho, C. K. F. . 2551. "Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Tang, L. J. , Lee, Pooi See , Ho, C. K. F. . "Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2551. Print. Tan, Eu Jin , Pey, Kin Leong , Singh, Navab , Lo, Guo-Qiang , Chi, Dong Zhi , Chin, Yoke King , Tang, L. J. , Lee, Pooi See , Ho, C. K. F. . Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2551.
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