| ชื่อเรื่อง | : | Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| นักวิจัย | : | Sohimee, Siti Nurfarhana , Hassan, Zainuriah , Ahmed, Naser Mahmoud , Lim, Way Fong , Quah, Hock Jin |
| คำค้น | : | QC1-999 Physics |
| หน่วยงาน | : | Universiti Sains Malaysia, Malaysia |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2560 |
| อ้างอิง | : | http://eprints.usm.my/49004/1/ZH_16.pdf%20cut.pdf , Sohimee, Siti Nurfarhana and Hassan, Zainuriah and Ahmed, Naser Mahmoud and Lim, Way Fong and Quah, Hock Jin (2017) Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique. In: The International Conference of Solid State Science and Technology (ICSSST 2017). |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | http://eprints.usm.my/49004/ |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Alternating current (sine-wave a.c (50Hz)) photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultraviolet (UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with a ratio (5:20) for 30 minutes under different UV lamp intensity; 10%, 30% and 60%. The samples were characterized by using atomic force microscopy (AFM) and X-ray diffraction (XRD). The AFM measurements revealed porous silicon with 30% of UV light intensity has the highest surface roughness value with a pyramidal shape. XRD analysis showed FWHM value of etched samples increased as the crystallite size of the etched sample decreased. |
| บรรณานุกรม | : |
Sohimee, Siti Nurfarhana , Hassan, Zainuriah , Ahmed, Naser Mahmoud , Lim, Way Fong , Quah, Hock Jin . (2560). Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique.
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia. Sohimee, Siti Nurfarhana , Hassan, Zainuriah , Ahmed, Naser Mahmoud , Lim, Way Fong , Quah, Hock Jin . 2560. "Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique".
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia. Sohimee, Siti Nurfarhana , Hassan, Zainuriah , Ahmed, Naser Mahmoud , Lim, Way Fong , Quah, Hock Jin . "Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique."
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia, 2560. Print. Sohimee, Siti Nurfarhana , Hassan, Zainuriah , Ahmed, Naser Mahmoud , Lim, Way Fong , Quah, Hock Jin . Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique. กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia; 2560.
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