| ชื่อเรื่อง | : | Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes |
| นักวิจัย | : | Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Teng, Jing Hua , Wei, Sun Xiao , Demir, Hilmi Volkan |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Power electronics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Kyaw, Z., Zhang, Z.-H., Liu, W., Tan, S. T., Ju, Z. G., Zhang, X. L., et al. (2014). Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes. Applied Physics Letters, 104(16), 161113-. , http://hdl.handle.net/10220/19608 , http://dx.doi.org/10.1063/1.4873395 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, the electron leakage is found to be effectively reduced, while the hole injection efficiency is simultaneously increased significantly, hence enabling a greatly enhanced radiative recombination rate within the active region. As a result, improvements of 12.25% in the optical output power and 11.98% in the external quantum efficiency are obtained from the proposed device with the respect to the reference device. |
| บรรณานุกรม | : |
Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Teng, Jing Hua , Wei, Sun Xiao , Demir, Hilmi Volkan . (2557). Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Teng, Jing Hua , Wei, Sun Xiao , Demir, Hilmi Volkan . 2557. "Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Teng, Jing Hua , Wei, Sun Xiao , Demir, Hilmi Volkan . "Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Kyaw, Zabu , Zhang, Zi-Hui , Liu, Wei , Tan, Swee Tiam , Ju, Zhen Gang , Zhang, Xue Liang , Ji, Yun , Hasanov, Namig , Zhu, Binbin , Lu, Shunpeng , Zhang, Yiping , Teng, Jing Hua , Wei, Sun Xiao , Demir, Hilmi Volkan . Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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