| ชื่อเรื่อง | : | On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer |
| นักวิจัย | : | Ju, Zhengang , Tan, Swee Tiam , Zhang, Zi-Hui , Ji, Y. , Kyaw, Z. , Dikme, Y. , Sun, Xiaowei , Demir, Hilmi Volkan |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Ju, Z., Tan, S. T., Zhang, Z.-H., Ji, Y., Kyaw, Z., Dikme, Y., et al. (2012). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. Applied physics letters, 100. , http://hdl.handle.net/10220/8126 , http://dx.doi.org/10.1063/1.3694054 , 165110 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. |
| บรรณานุกรม | : |
Ju, Zhengang , Tan, Swee Tiam , Zhang, Zi-Hui , Ji, Y. , Kyaw, Z. , Dikme, Y. , Sun, Xiaowei , Demir, Hilmi Volkan . (2555). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ju, Zhengang , Tan, Swee Tiam , Zhang, Zi-Hui , Ji, Y. , Kyaw, Z. , Dikme, Y. , Sun, Xiaowei , Demir, Hilmi Volkan . 2555. "On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ju, Zhengang , Tan, Swee Tiam , Zhang, Zi-Hui , Ji, Y. , Kyaw, Z. , Dikme, Y. , Sun, Xiaowei , Demir, Hilmi Volkan . "On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Ju, Zhengang , Tan, Swee Tiam , Zhang, Zi-Hui , Ji, Y. , Kyaw, Z. , Dikme, Y. , Sun, Xiaowei , Demir, Hilmi Volkan . On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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