| ชื่อเรื่อง | : | Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| นักวิจัย | : | Rais, Shamsul Amir Abdul , Najiha, Hayatun , Hassan, Zainuriah , Shuhaimi, Ahmad |
| คำค้น | : | QC1-999 Physics |
| หน่วยงาน | : | Universiti Sains Malaysia, Malaysia |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | - |
| อ้างอิง | : | http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf , Rais, Shamsul Amir Abdul and Najiha, Hayatun and Hassan, Zainuriah and Shuhaimi, Ahmad Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition. In: 6th International Conference on Solid State Science (ICSSST) 2017 & Technology and Workshop on Advanced Materials Technology: Growth & Characterization. |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | http://eprints.usm.my/48819/ |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution x-ray diffraction spectroscopy, and photoluminescence spectroscopy. |
| บรรณานุกรม | : |
Rais, Shamsul Amir Abdul , Najiha, Hayatun , Hassan, Zainuriah , Shuhaimi, Ahmad . (). Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition.
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia. Rais, Shamsul Amir Abdul , Najiha, Hayatun , Hassan, Zainuriah , Shuhaimi, Ahmad . . "Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition".
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia. Rais, Shamsul Amir Abdul , Najiha, Hayatun , Hassan, Zainuriah , Shuhaimi, Ahmad . "Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition."
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia, . Print. Rais, Shamsul Amir Abdul , Najiha, Hayatun , Hassan, Zainuriah , Shuhaimi, Ahmad . Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition. กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia; .
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