| ชื่อเรื่อง | : | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| นักวิจัย | : | Asri, R. I. M , Hamzah, N. A , Ahmad, M. A. , Alias, E. A. , Sahar, M. M. , Abdullah, M. |
| คำค้น | : | QC1-999 Physics |
| หน่วยงาน | : | Universiti Sains Malaysia, Malaysia |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2563 |
| อ้างอิง | : | http://eprints.usm.my/49101/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2082.pdf , Asri, R. I. M and Hamzah, N. A and Ahmad, M. A. and Alias, E. A. and Sahar, M. M. and Abdullah, M. (2020) Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | http://eprints.usm.my/49101/ |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis, decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence (PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices. |
| บรรณานุกรม | : |
Asri, R. I. M , Hamzah, N. A , Ahmad, M. A. , Alias, E. A. , Sahar, M. M. , Abdullah, M. . (2563). Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes.
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia. Asri, R. I. M , Hamzah, N. A , Ahmad, M. A. , Alias, E. A. , Sahar, M. M. , Abdullah, M. . 2563. "Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes".
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia. Asri, R. I. M , Hamzah, N. A , Ahmad, M. A. , Alias, E. A. , Sahar, M. M. , Abdullah, M. . "Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes."
กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia, 2563. Print. Asri, R. I. M , Hamzah, N. A , Ahmad, M. A. , Alias, E. A. , Sahar, M. M. , Abdullah, M. . Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes. กรุงเทพมหานคร : Universiti Sains Malaysia, Malaysia; 2563.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
