| ชื่อเรื่อง | : | Unified AC charge and DC current modeling for very-deep-submicron CMOS technology. |
| นักวิจัย | : | Chiah, Siau Ben. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Chiah, S. B. (2007). Unified AC charge and DC current modeling for very-deep-submicron CMOS technology. Doctoral thesis, Nanyang Technological University, Singapore. , http://hdl.handle.net/10356/3534 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | - |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an explicit single-piece unified compact charge model. This is also to ensure charge-neutrality across different regions of operation especially at the flat-band condition. The charge modeling approach requires no modification in formulation to include coupled polycrystalline silicon and quantum-mechanical effects for all regions. The approach has been shown to have the potential to be extended to non-conventional bulk-Si MOSFETs structure such as in strain-Si or hetero-structure MOSFETs. |
| บรรณานุกรม | : |
Chiah, Siau Ben. . (2550). Unified AC charge and DC current modeling for very-deep-submicron CMOS technology..
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Chiah, Siau Ben. . 2550. "Unified AC charge and DC current modeling for very-deep-submicron CMOS technology.".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Chiah, Siau Ben. . "Unified AC charge and DC current modeling for very-deep-submicron CMOS technology.."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Chiah, Siau Ben. . Unified AC charge and DC current modeling for very-deep-submicron CMOS technology.. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
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