| ชื่อเรื่อง | : | Band alignment between GaN and ZrO2 formed by atomic layer deposition |
| นักวิจัย | : | Ye, Gang , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Li, Y., Liu, Z. H., et al. (2014). Band alignment between GaN and ZrO2 formed by atomic layer deposition. Applied Physics Letters, 105(2), 022106-. , 0003-6951 , http://hdl.handle.net/10220/20376 , http://dx.doi.org/10.1063/1.4890470 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE V of 1 ± 0.2 eV and conduction band discontinuity ΔE C of 1.2 ± 0.2 eV at ZrO2/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO2 layer into account. |
| บรรณานุกรม | : |
Ye, Gang , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . (2557). Band alignment between GaN and ZrO2 formed by atomic layer deposition.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ye, Gang , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . 2557. "Band alignment between GaN and ZrO2 formed by atomic layer deposition".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ye, Gang , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . "Band alignment between GaN and ZrO2 formed by atomic layer deposition."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Ye, Gang , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Li, Yang , Liu, Zhi Hong , Ang, Kian Siong . Band alignment between GaN and ZrO2 formed by atomic layer deposition. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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