| ชื่อเรื่อง | : | Germanium p-i-n avalanche photodetector fabricated by point defect healing process |
| นักวิจัย | : | Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong |
| คำค้น | : | DRNTU::Engineering::Mechanical engineering::Control engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Shim, J., Kang, D. H., Yoo, G., Hong, S. T., Jung, W. S., Kuh, B. J., et al. (2014). Germanium p-i-n avalanche photodetector fabricated by point defect healing process. Optics Letters, 39(14), 4204-4207. , http://hdl.handle.net/10220/20317 , http://dx.doi.org/10.1364/OL.39.004204 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Optics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5 V), low operating voltage (avalanche breakdown voltage=8–13 V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017 cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications. |
| บรรณานุกรม | : |
Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . (2557). Germanium p-i-n avalanche photodetector fabricated by point defect healing process.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . 2557. "Germanium p-i-n avalanche photodetector fabricated by point defect healing process".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . "Germanium p-i-n avalanche photodetector fabricated by point defect healing process."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Shim, Jae Woo , Kang, Dong-Ho , Yoo, Gwangwe , Hong, Seong-Taek , Jung, Woo-Shik , Kuh, Bong Jin , Lee, Beomsuk , Shin, Dongjae , Ha, Kyoungho , Kim, Gwang Sik , Yu, Hyun-Yong , Baek, Jung Woo , Park, Jin-Hong . Germanium p-i-n avalanche photodetector fabricated by point defect healing process. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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