| ชื่อเรื่อง | : | Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions |
| นักวิจัย | : | Richard D'Costa, Vijay , Subramanian, Sujith , Li, Daosheng , Wicaksono, Satrio , Yoon, Soon Fatt , Tok, Eng Soon , Yeo, Yee-Chia |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Richard D'Costa, V., Subramanian, S., Li, D., Wicaksono, S., Yoon, S. F., Tok, E. S., et al. (2014). Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions. Applied Physics Letters, 104(23), 232102-. , 0003-6951 , http://hdl.handle.net/10220/20134 , http://dx.doi.org/10.1063/1.4882917 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied Physics Letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods. |
| บรรณานุกรม | : |
Richard D'Costa, Vijay , Subramanian, Sujith , Li, Daosheng , Wicaksono, Satrio , Yoon, Soon Fatt , Tok, Eng Soon , Yeo, Yee-Chia . (2557). Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Richard D'Costa, Vijay , Subramanian, Sujith , Li, Daosheng , Wicaksono, Satrio , Yoon, Soon Fatt , Tok, Eng Soon , Yeo, Yee-Chia . 2557. "Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Richard D'Costa, Vijay , Subramanian, Sujith , Li, Daosheng , Wicaksono, Satrio , Yoon, Soon Fatt , Tok, Eng Soon , Yeo, Yee-Chia . "Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Richard D'Costa, Vijay , Subramanian, Sujith , Li, Daosheng , Wicaksono, Satrio , Yoon, Soon Fatt , Tok, Eng Soon , Yeo, Yee-Chia . Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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