| ชื่อเรื่อง | : | Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons |
| นักวิจัย | : | Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. |
| คำค้น | : | DRNTU::Science::Chemistry |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2557 |
| อ้างอิง | : | Lin, A. L., Peng, H., Liu, Z., Wu, T., Su, C., Loh, K. P., et al. (2014). Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons. Small, 10(10), 1945–1952. , 1613-6810 , http://hdl.handle.net/10220/19751 , http://dx.doi.org/10.1002/smll.201302986 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Small |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation. |
| บรรณานุกรม | : |
Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . (2557). Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . 2557. "Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . "Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2557. Print. Lin, Aigu L. , Peng, Haiyang , Liu, Zhiqi , Wu, Tom , Su, Chenliang , Loh, Kian Ping , Ariando , Chen, Wei , Wee, Andrew T. S. . Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2557.
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