| ชื่อเรื่อง | : | Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices |
| นักวิจัย | : | Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Wang, Lianhui , Huang, Wei , Zhang, Hua |
| คำค้น | : | DRNTU::Engineering::Materials. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Liu, J., Yin, Z., Cao, X., Zhao, F., Wang, L., Huang, W., et al. (2013). Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices. Advanced Materials, 25(2), 233-238. , 0935-9648 , http://hdl.handle.net/10220/18985 , http://dx.doi.org/10.1002/adma.201203349 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Advanced materials |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices. |
| บรรณานุกรม | : |
Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Wang, Lianhui , Huang, Wei , Zhang, Hua . (2556). Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Wang, Lianhui , Huang, Wei , Zhang, Hua . 2556. "Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Wang, Lianhui , Huang, Wei , Zhang, Hua . "Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Liu, Juqing , Yin, Zongyou , Cao, Xiehong , Zhao, Fei , Wang, Lianhui , Huang, Wei , Zhang, Hua . Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
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