| ชื่อเรื่อง | : | Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon |
| นักวิจัย | : | Ye, G. , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Hofstetter, R. , Li, Y. , Anand, M. J. , Ang, K. S. , Bryan, Maung Ye Kyaw Thu , Foo, Siew Chuen |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Hofstetter, R., Li, Y., et al. (2013). Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon. Applied physics letters, 103(14), 142109-. , 0003-6951 , http://hdl.handle.net/10220/18429 , http://dx.doi.org/10.1063/1.4824445 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this Letter, the device performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using 10-nm-thick atomic-layer-deposited ZrO2 as gate dielectrics is reported. The ZrO2 AlGaN/GaN MISHEMTs showed improved maximum drain current density (I dmax) with high peak transconductance (g mmax) as comparison to Schottky-barrier-gate HEMTs (SB-HEMTs). Also compared to SB-HEMTs, reverse gate leakage current was four orders of magnitude lower and forward gate bias extended to +7.4 V. At energy from −0.29 eV to −0.36 eV, low interface trap state density evaluated by AC conductance and “Hi-Lo frequency” methods indicates good quality of atomic-layer-deposited ZrO2 dielectric layer. |
| บรรณานุกรม | : |
Ye, G. , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Hofstetter, R. , Li, Y. , Anand, M. J. , Ang, K. S. , Bryan, Maung Ye Kyaw Thu , Foo, Siew Chuen . (2556). Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ye, G. , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Hofstetter, R. , Li, Y. , Anand, M. J. , Ang, K. S. , Bryan, Maung Ye Kyaw Thu , Foo, Siew Chuen . 2556. "Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ye, G. , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Hofstetter, R. , Li, Y. , Anand, M. J. , Ang, K. S. , Bryan, Maung Ye Kyaw Thu , Foo, Siew Chuen . "Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Ye, G. , Wang, Hong , Arulkumaran, Subramaniam , Ng, Geok Ing , Hofstetter, R. , Li, Y. , Anand, M. J. , Ang, K. S. , Bryan, Maung Ye Kyaw Thu , Foo, Siew Chuen . Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
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