| ชื่อเรื่อง | : | Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector |
| นักวิจัย | : | Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Yoon, Soon Fatt |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2550 |
| อ้างอิง | : | Ma, B. S., Fan, W., Dang, Y. X., Cheah, W. K.,& Yoon, S. F. (2007). Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector. Applied physics letters, 91(4), 041905. , 0003-6951 , http://hdl.handle.net/10220/18119 , http://dx.doi.org/10.1063/1.2762290 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Applied physics letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift of 40 meV mainly due to the group-III interdiffusion. As the annealing temperature increases to 825 °C, the blueshift decreases from 40 to 15 meV due to the nitrogen substitutional-interstitional kickout effect, Al/Ga interdiffusion at the AlAs/AlGaAs interface, and strain reduction. After annealing, the difference between the PLE peak energy and the detection energy decreases with increasing detection energy because of the redistribution of elemental concentrations. |
| บรรณานุกรม | : |
Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Yoon, Soon Fatt . (2550). Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Yoon, Soon Fatt . 2550. "Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Yoon, Soon Fatt . "Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2550. Print. Ma, B. S. , Fan, Weijun , Dang, Y. X. , Cheah, Weng Kwong , Yoon, Soon Fatt . Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2550.
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