| ชื่อเรื่อง | : | Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005 |
| นักวิจัย | : | Ding, K. , Wicaksono, Satrio , Ma, B. S. , Su, F. H. , Wang, W. J. , Li, G. H. , Yoon, Soon Fatt , Fan, Weijun |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Wang, W., Su, F., Ding, K., Li, G., Yoon, S., Fan, W., Wicaksono, S., & Ma, B. (2006). Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005. Physical Review B, 74(19), 195201(6pg). , http://hdl.handle.net/10220/18121 , http://dx.doi.org/10.1103/PhysRevB.74.195201 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Physical review B |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The photoluminescence of GaAs0.973Sb0.022N0.005 was investigated at different temperatures, pressures, and excitation powers. Both the alloy band edge and the N-cluster emissions, which show different temperature and excitation power dependences, were observed. The pressure coefficients obtained in the pressure range of 0–1.4 GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-cluster emissions shift to higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the x-valley component in the N-related states with increasing pressure. A rapid decrease of the emission intensity of the N-related band was also observed when the pressure exceeded about 8 GPa. |
| บรรณานุกรม | : |
Ding, K. , Wicaksono, Satrio , Ma, B. S. , Su, F. H. , Wang, W. J. , Li, G. H. , Yoon, Soon Fatt , Fan, Weijun . (2549). Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ding, K. , Wicaksono, Satrio , Ma, B. S. , Su, F. H. , Wang, W. J. , Li, G. H. , Yoon, Soon Fatt , Fan, Weijun . 2549. "Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ding, K. , Wicaksono, Satrio , Ma, B. S. , Su, F. H. , Wang, W. J. , Li, G. H. , Yoon, Soon Fatt , Fan, Weijun . "Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Ding, K. , Wicaksono, Satrio , Ma, B. S. , Su, F. H. , Wang, W. J. , Li, G. H. , Yoon, Soon Fatt , Fan, Weijun . Different temperature and pressure behavior of band edge and N-cluster emissions in GaAs0.973Sb0.022N0.005. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
|
ridm@nrct.go.th ระบบคลังข้อมูลงานวิจัยไทย รายการโปรดที่คุณเลือกไว้
