| ชื่อเรื่อง | : | Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| นักวิจัย | : | Dang, Y. X. , Fan, Weijun , Ng, S. T. , Wicaksono, Satrio , Yoon, Soon Fatt , Zhang, Dao Hua |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2548 |
| อ้างอิง | : | Dang, Y. X., Fan, W., Ng, S. T., Wicaksono, S., Yoon, S. F., & Zhang, D. H. (2005). Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method. Journal of applied physics, 98(2), 026102. , 0021-8979 , http://hdl.handle.net/10220/18005 , http://dx.doi.org/10.1063/1.1954886 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k· p method. The estimated interdiffusion constants D are ~10−17–10−16 cm2 / s in the above temperature range and an activation energy of 1±0.4 eV is obtained. |
| บรรณานุกรม | : |
Dang, Y. X. , Fan, Weijun , Ng, S. T. , Wicaksono, Satrio , Yoon, Soon Fatt , Zhang, Dao Hua . (2548). Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Dang, Y. X. , Fan, Weijun , Ng, S. T. , Wicaksono, Satrio , Yoon, Soon Fatt , Zhang, Dao Hua . 2548. "Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Dang, Y. X. , Fan, Weijun , Ng, S. T. , Wicaksono, Satrio , Yoon, Soon Fatt , Zhang, Dao Hua . "Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2548. Print. Dang, Y. X. , Fan, Weijun , Ng, S. T. , Wicaksono, Satrio , Yoon, Soon Fatt , Zhang, Dao Hua . Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2548.
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