| ชื่อเรื่อง | : | Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy |
| นักวิจัย | : | Ng, T. K. , Yoon, Soon Fatt , Fan, Weijun , Loke, Wan Khai , Wang, S. Z. , Ng, S. T. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2546 |
| อ้างอิง | : | Ng, T. K., Yoon, S. F., Fan, W., Loke, W. K., Wang, S. Z., & Ng, S. T. (2003). Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 21(6), 2324. , 0734-211X , http://hdl.handle.net/10220/17959 , http://dx.doi.org/10.1116/1.1617284 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of vacuum science & technology B: microelectronics and nanometer structures |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The photoluminescence (PL) quenching characteristics of a thermal-annealed ~7 nm GaInNAs/ GaAs quantum well (QW) with In=30% and N=1.5% were studied from 4 to 150 K. It is found that the integrated PL intensity versus temperature characteristic can be well fitted by a double activation energy model. One of the centers with low activation energy EB=9 meV is thought to originate from a localized state that traps carriers at temperatures below ~100 K. Therefore, EB is the thermal energy required to activate the localized state carriers to the e1 state of the GaInNAs QW. Another center with larger activation energy EA=38 meV has a more significant PL quenching effect at temperatures above ~120 K. This center is possibly contributed by the EL6 defect level in the GaAs barrier layer, as a result of low V/III ratio of 15, and low growth temperature of 450 °C. |
| บรรณานุกรม | : |
Ng, T. K. , Yoon, Soon Fatt , Fan, Weijun , Loke, Wan Khai , Wang, S. Z. , Ng, S. T. . (2546). Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, T. K. , Yoon, Soon Fatt , Fan, Weijun , Loke, Wan Khai , Wang, S. Z. , Ng, S. T. . 2546. "Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Ng, T. K. , Yoon, Soon Fatt , Fan, Weijun , Loke, Wan Khai , Wang, S. Z. , Ng, S. T. . "Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2546. Print. Ng, T. K. , Yoon, Soon Fatt , Fan, Weijun , Loke, Wan Khai , Wang, S. Z. , Ng, S. T. . Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2546.
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