| ชื่อเรื่อง | : | Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs |
| นักวิจัย | : | Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2549 |
| อ้างอิง | : | Cheah, W. K., Fan, W., Yoon, S. F., Loke, W. K., Liu, R., & Wee, A. T. S. (2006). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs. Journal of applied physics, 99(10), 104908. , 0021-8979 , http://hdl.handle.net/10220/17894 , http://dx.doi.org/10.1063/1.2199976 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of applied physics |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Low-temperature 10 K photoluminescence measurements of GaAs1−xNx epitaxial layers grown on GaAs reveal an anomalous second peak in solid-source molecular beam epitaxy. Rapid thermal annealing RTA of a specific GaAsN sample reveals a lower energy peak which redshifts and a higher energy peak which blueshifts under increasing annealing temperature. The band-anticrossing model is used to identify the origins of the two peaks and we propose a model to explain the RTA observations by the concept of increased confinement in areas of higher N concentrations by trapped N localized states. The peak is due to the accumulation of N content near the GaAs/GaAsN interface. Hence, this abnormal annealing behavior occurs in layers with nonuniform N concentration at the GaAsN/GaAs interface. |
| บรรณานุกรม | : |
Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . (2549). Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . 2549. "Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . "Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2549. Print. Cheah, Weng Kwong , Fan, Weijun , Yoon, Soon Fatt , Loke, Wan Khai , Liu, R. , Wee, A. T. S. . Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs[sub 1−x]N[sub x] on GaAs. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2549.
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