| ชื่อเรื่อง | : | Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source |
| นักวิจัย | : | Wang, S. Z. , Yoon, Soon Fatt , Loke, Wan Khai , Ng, T. K. , Fan, Weijun |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2545 |
| อ้างอิง | : | Wang, S. Z., Yoon, S. F., Loke, W. K., Ng, T. K., & Fan, W. (2002). Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source. Journal of vacuum science & technology B : microelectronics and nanometer structures, 20(4), 1364. , 0734-211X , http://hdl.handle.net/10220/18008 , http://dx.doi.org/10.1116/1.1490391 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of vacuum science & technology B : microelectronics and nanometer structures |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A modified mode for GaAsN growth using solid-source molecular beam epitaxy in conjunction with dispersive nitrogen to avoid the bombardment effect of energetic nitrogen ions is reported. High-quality GaAsN epilayers and good GaAsN/GaAs interfaces were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using the direct nitrogen beam. The optical quality of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower nitrogen ion bombardment effect. This growth technique is expected to be advantageous for growing high-quality GaAsN materials for optoelectronic applications. |
| บรรณานุกรม | : |
Wang, S. Z. , Yoon, Soon Fatt , Loke, Wan Khai , Ng, T. K. , Fan, Weijun . (2545). Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, S. Z. , Yoon, Soon Fatt , Loke, Wan Khai , Ng, T. K. , Fan, Weijun . 2545. "Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Wang, S. Z. , Yoon, Soon Fatt , Loke, Wan Khai , Ng, T. K. , Fan, Weijun . "Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2545. Print. Wang, S. Z. , Yoon, Soon Fatt , Loke, Wan Khai , Ng, T. K. , Fan, Weijun . Improved GaN[sub x]As[sub 1−x] quality grown by molecular beam epitaxy with dispersive nitrogen source. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2545.
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