| ชื่อเรื่อง | : | Interaction between graphene and the surface of SiO2 |
| นักวิจัย | : | Fan, X. F. , Zheng, W. T. , Chihaia, Viorel , Shen, Zexiang , Kuo, Jer-Lai |
| คำค้น | : | - |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Fan, X. F., Zheng, W. T., Chihaia, V., Shen, Z., & Kuo, J.-L. (2012). Interaction between graphene and the surface of SiO2 . Journal of physics : condensed matter, 24(30), 305004. , http://hdl.handle.net/10220/17247 , http://dx.doi.org/10.1088/0953-8984/24/30/305004 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Journal of physics : condensed matter |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | The interaction between graphene and a SiO2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO2 surface is explained based on a general consideration of the configuration structures of the SiO2 surface. It is found that the oxygen defect in a SiO2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO2 surface observed in a lot of experiments. |
| บรรณานุกรม | : |
Fan, X. F. , Zheng, W. T. , Chihaia, Viorel , Shen, Zexiang , Kuo, Jer-Lai . (2555). Interaction between graphene and the surface of SiO2.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Fan, X. F. , Zheng, W. T. , Chihaia, Viorel , Shen, Zexiang , Kuo, Jer-Lai . 2555. "Interaction between graphene and the surface of SiO2".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Fan, X. F. , Zheng, W. T. , Chihaia, Viorel , Shen, Zexiang , Kuo, Jer-Lai . "Interaction between graphene and the surface of SiO2."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Fan, X. F. , Zheng, W. T. , Chihaia, Viorel , Shen, Zexiang , Kuo, Jer-Lai . Interaction between graphene and the surface of SiO2. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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