| ชื่อเรื่อง | : | InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy |
| นักวิจัย | : | Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2554 |
| อ้างอิง | : | Liang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2011). InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy. Physica status solidi (c), 9(2), 214-217. , http://hdl.handle.net/10220/17644 , http://dx.doi.org/10.1002/pssc.201100261 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Physica status solidi (c) |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | InAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in-depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm-2 were obtained. It was shown that high QD growth temperature helps to promote uniform dot size distribution but In-Ga intermixing may lead to excessive thermal escape of carriers. Photoluminescence studies suggest that QDs on GeOI have good optical quality but with small amount of defects, acting as non-radiative recombination centers. |
| บรรณานุกรม | : |
Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . (2554). InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . 2554. "InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . "InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2554. Print. Liang, Y. Y. , Yoon, Soon Fatt , Ngo, C. Y. , Loke, Wan Khai , Fitzgerald, Eugene A. . InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2554.
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