| ชื่อเรื่อง | : | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| นักวิจัย | : | Liu, W. J. , Sun, Xiaowei , Tran, Xuan Anh , Fang, Z. , Wang, Z. R. , Wang, F. , Wu, L. , Zhang, J. F. , Wei, J. , Zhu, H. L. , Yu, Hongyu |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering. |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Liu, W. J., Sun, X., Tran, X. A., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., & Yu, H. (2012). Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection. IEEE transactions on device and materials reliability, 12(2), 478-481. , http://hdl.handle.net/10220/16505 , http://dx.doi.org/10.1109/TDMR.2012.2190414 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on device and materials reliability |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. |
| บรรณานุกรม | : |
Liu, W. J. , Sun, Xiaowei , Tran, Xuan Anh , Fang, Z. , Wang, Z. R. , Wang, F. , Wu, L. , Zhang, J. F. , Wei, J. , Zhu, H. L. , Yu, Hongyu . (2555). Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, W. J. , Sun, Xiaowei , Tran, Xuan Anh , Fang, Z. , Wang, Z. R. , Wang, F. , Wu, L. , Zhang, J. F. , Wei, J. , Zhu, H. L. , Yu, Hongyu . 2555. "Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, W. J. , Sun, Xiaowei , Tran, Xuan Anh , Fang, Z. , Wang, Z. R. , Wang, F. , Wu, L. , Zhang, J. F. , Wei, J. , Zhu, H. L. , Yu, Hongyu . "Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Liu, W. J. , Sun, Xiaowei , Tran, Xuan Anh , Fang, Z. , Wang, Z. R. , Wang, F. , Wu, L. , Zhang, J. F. , Wei, J. , Zhu, H. L. , Yu, Hongyu . Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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