| ชื่อเรื่อง | : | Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| นักวิจัย | : | Yu, Q. , Lim, Wei Meng , Hu, S. G. , Chen, Tupei , Deng, L. J. , Liu, Y. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Yu, Q., Lim, W. M., Hu, S. G., Chen, T., Deng, L. J., & Liu, Y. (2012). Flexible nanoscale memory device based on resistive switching in nickel oxide thin film. Nanoscience and nanotechnology letters, 4(9), 940-943(4). , http://hdl.handle.net/10220/13694 , http://dx.doi.org/10.1166/nnl.2012.1398 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | Nanoscience and nanotechnology letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability. |
| บรรณานุกรม | : |
Yu, Q. , Lim, Wei Meng , Hu, S. G. , Chen, Tupei , Deng, L. J. , Liu, Y. . (2555). Flexible nanoscale memory device based on resistive switching in nickel oxide thin film.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yu, Q. , Lim, Wei Meng , Hu, S. G. , Chen, Tupei , Deng, L. J. , Liu, Y. . 2555. "Flexible nanoscale memory device based on resistive switching in nickel oxide thin film".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yu, Q. , Lim, Wei Meng , Hu, S. G. , Chen, Tupei , Deng, L. J. , Liu, Y. . "Flexible nanoscale memory device based on resistive switching in nickel oxide thin film."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Yu, Q. , Lim, Wei Meng , Hu, S. G. , Chen, Tupei , Deng, L. J. , Liu, Y. . Flexible nanoscale memory device based on resistive switching in nickel oxide thin film. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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