| ชื่อเรื่อง | : | Flexible write-once–read-many-times memory device based on a nickel oxide thin film |
| นักวิจัย | : | Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2555 |
| อ้างอิง | : | Yu, Q., Liu, Y., Chen, T., Liu, Z., Yu, Y. F., Lei, H. W., et al. (2012). Flexible write-once–read-many-times memory device based on a nickel oxide thin film. IEEE transactions on electron devices, 59(3), 858-862. , 0018-9383 , http://hdl.handle.net/10220/13467 , http://dx.doi.org/10.1109/TED.2011.2179939 |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | IEEE transactions on electron devices |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. |
| บรรณานุกรม | : |
Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . (2555). Flexible write-once–read-many-times memory device based on a nickel oxide thin film.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . 2555. "Flexible write-once–read-many-times memory device based on a nickel oxide thin film".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . "Flexible write-once–read-many-times memory device based on a nickel oxide thin film."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2555. Print. Yu, Q. , Liu, Y. , Chen, Tupei , Liu, Z. , Yu, Y. F. , Lei, H. W. , Zhu, J. , Fung, Stevenson Hon Yuen . Flexible write-once–read-many-times memory device based on a nickel oxide thin film. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2555.
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