| ชื่อเรื่อง | : | Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors |
| นักวิจัย | : | Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. |
| คำค้น | : | DRNTU::Engineering::Electrical and electronic engineering |
| หน่วยงาน | : | Nanyang Technological University, Singapore |
| ผู้ร่วมงาน | : | - |
| ปีพิมพ์ | : | 2556 |
| อ้างอิง | : | Liu, P., Chen, T., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., & Leong, K. C. (2013). Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. ECS solid state letters, 2(4), Q21-Q24. , http://hdl.handle.net/10220/13305 , http://dx.doi.org/10.1149/2.005304ssl |
| ที่มา | : | - |
| ความเชี่ยวชาญ | : | - |
| ความสัมพันธ์ | : | ECS solid state letters |
| ขอบเขตของเนื้อหา | : | - |
| บทคัดย่อ/คำอธิบาย | : | An exposure of the back channel of an indium gallium zinc oxide (IGZO) thin film transistor (TFT) to ultraviolet (UV)-activated oxygen can effectively shift the threshold voltage (Vth) of the TFT. The Vth decreases linearly with the exposure time while the on-state current greatly increase with the exposure time. The exposure doesn't have a strong impact on other device parameters. The effect of the exposure on the Vth is attributed to the increase in the electron concentration of the channel layer as a result of the creation of oxygen vacancies by exposure. |
| บรรณานุกรม | : |
Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . (2556). Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors.
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . 2556. "Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors".
กรุงเทพมหานคร : Nanyang Technological University, Singapore. Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . "Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors."
กรุงเทพมหานคร : Nanyang Technological University, Singapore, 2556. Print. Liu, P. , Chen, Tupei , Li, X. D. , Liu, Z. , Wong, J. I. , Liu, Y. , Leong, K. C. . Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. กรุงเทพมหานคร : Nanyang Technological University, Singapore; 2556.
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